Tungsten Etchant TFW
Selective etchant for tungsten thin film metallizations used in semiconductor and microelectronics technology. FW selective etchant is buffered, mildly alkaline ferricyanide-based formulations providing high reslution patterns, with minimal undercutting and photoresist compatibility.
Controlled uniform etching is achieved by immersion or spray etch technique.
COMPATIBILITY :
| | Al | Au | Cr | Cu | Ni | Si | Si3N4 | SiO2 | Ti | W | GaAs | Ta/TaN |
| W ETCH TFW | Etch | Etch | Etch | Ok | Etch | Slight | Ok | Slight | Ok | Etch | Etch | Ok |
Etch = significant attack / Slight = Slight attack / Ok = No Attack / Surf ox = Surface Oxidation /
Corrode = Surface Corrosion
Selectivity of about 10:1 for "slight" and selectivity > 1000:1 for "ok" or "no attack"
PROPERTIES :
| | Tungsten Etchant TFW
|  |
| Appearance | Amber, Aqueous solution |
| Etch Rate @ 20℃ | 30 Å/sec (Immersion) |
| 80 Å/sec (Spary) |
| Resist Compatibility | Nega & Posi |
| pH | 8.0 |
| Rinse & Dilution | Distilled Water |
PACKAGING :
• Available in 3.78L(1 gallon) poly bottles
• Custom packaging is available upon request
