Tin Oxide / Indium Tin Oxide Etchant TE-100
Tin Oxide/Indium Tin Oxide Etchant TE-100 is a selective etchant for tin oxide and indium tin oxdie (ITO) layers in microelectronics applications. TE-100 effectively etches ITO and tin oxide films deposited on ceramics, dielectrics, semiconductors, and many metals.
TE-100 provides excellent definition and etch rate control. Board compatibility with positive and negative photoresists is offered. TE-100 is not compatible with nickel, copper, nichrome, and aluminum.
PROPERTIES :
| ITO Etchant TE-100
| |
Appearance | Dark amber liquid |
Operating Temperature | 40 ~ 50¡É |
Storage Temperature | 20 ~ 25¡É |
Rinse | Deionized water |
Shelf Life | 1 year at 15~25¡É |
Etch Rate @ 25¡É | 10 -20 ¡Ê/sec |
APPLICATION :
• ITO films are best prepared by first depositing a film of indium-tin.
• The indium-tin film is then oxidized in an ozygen plasma or at elevated temperatures in an oxygenating atmosphere.
• When etched, indium is solublized as a trivalent aquocomplex [in(H2O)6]3+ while tin forms a [SnCl6]2- anion.