Gold Etchant GE-8110
GE-8110 Gold Etchant is etching solution designed specifically for etching thin films of gold in the fabrication fo semiconductor devices and thin film microelectronics. The solution is based on potassium iodide and iodine(KI/I2) chemistry and do not contain cyanide. This is compatible with both positive and negative photoresist materilas, giving controllable line definition. GE-8110 is bufered to approximately pH 8.0 while GE-8111 is acidic with a lower solids content and is a slower acting etching solution. Both etchants should be used at room temperature in a well-ventilated area.
COMPATIBILITY :
| | Al | Au | Cr | Cu | Ni | Si | Si3N4 | SiO2 | Ti | W | GaAs | Ta/TaN |
| GE-8110 | Etch | Etch | Ok | Corrode | Ok | Ok | Ok | Ok | Ok | Ok | Etch | Ok |
Etch = significant attack / Slight = Slight attack / Ok = No Attack / Surf ox = Surface Oxidation /
Corrode = Surface Corrosion
Selectivity of about 10:1 for "slight" and selectivity > 1000:1 for "ok" or "no attack"
PROPERTIES :
| | Gold Etchant GE-8110
|  |
| Appearance | Dark brown liquid with iodine vapor odor |
| Ventilation | Hood Recommended |
| Operating Temperature | Room Temperature |
| Agitation | Work agitation speed
Accelerates etch rate |
| Tank | Glass |
| pH @ 20℃ | 7.9±0.1 |
| Ednsity @20℃ | 1.33±0.01 |
| Rinse | Distilled, Dionized Water |
IMPURITY :
Max. Impurity
| (ppm) |
| Sodium (Na) | 40 |
| Chlorine & Bromides (Cl) | 100 |
| Lead (Pb) | 5 |
| Iron (Fe) | 3 |
| Sulfur (as sulfates) | 50 |
| Phosphorous (as phosphates) | 10 |
