Gold Etchant GE-8148
This thin film etchant is used to obtain selective etching of gold in the photo fabrication fo microelectronic circuits. Used in conjunction with photoresist technology, this etchant form precise electrodes and resistor patterns in thin films prepared on alumina and other substrates. High purity, low sodium and 0.1 micron filtration for semiconductor and microelectronics applications.
COMPATIBILITY :
| Al | Au | Cr | Cu | Ni | Si | Si3N4 | SiO2 | Ti | W | GaAs | Ta/TaN |
GE-8148 | Etch | Etch | Ok | Corrode | Ok | Ok | Ok | Ok | Ok | Ok | Etch | Ok |
Etch = significant attack / Slight = Slight attack / Ok = No Attack / Surf ox = Surface Oxidation /
Corrode = Surface Corrosion
Selectivity of about 10:1 for "slight" and selectivity > 1000:1 for "ok" or "no attack"
PROPERTIES :
| Gold Etchant GE-8148
| |
Ventilation | Hood Recommended |
Operating Temperature | Room Temperature |
Agitation | Work agitation speed Accelerates etch rate |
Tank | Glass |
Etch Rate @ 25¡É | 50 ¡Ê/sec |
Composition | Ready to use liquid Contains KI-I2 complex Phosphate compound |
pH @ 20¡É | 8.15¡¾0.2 |
Ednsity @20¡É | 1.265¡¾0.01 |
Etch Capacity gm/gal | 100 |
Rinse | Distilled, Dionized Water |
Waste Disposal (Reclaim Gold in spent etchant) | Dispose in accordance with all federal, state and local regulations. |
APPLICATION :
• Etching readily controlled with minimum undercutting - provides excellent definition.
• Room Temperature operated.
• Uniform etch rates.
• Economical
• GE-8148 is Cyanide free, no attack of nickel films.