ALUMINUM ETCHANT TYPE F
TRANSENE Aluminum Etchant Type F is a stable preparation used to etch aluminum or aluminum-silicon metallizations on silicondevices and in integrated circuit applications. Aluminum contacts are defined and interconnections are formed.
Aluminum Etchant Type F is formulated with unique properties easily overcome many of the difficulties experienced in aluminum etch processes such as residu. The aluminum metallization and etching process using photo-lithographic techniques is basic to the semiconductor and microelectronic technology.
TRANSENE Aluminum Etchant Type F is highly compatible with commercial photoresists and permit delineation into high resolution patterns. Metal line width of 1 mil and separations less than 5 microns are feasible. The high resolution is practical with TRANSENE Aluminum Etchant Type F because lifting of photoresist patterns does not occur and undercutting is minimized.
PROPERTIES :
| Al ETH TYPE F
| |
Appearance | liquid |
Specific Gravity @25¡É | 1.45 |
Boiling Point | > 100¡É |
Resist Compatibility | Nega & Posi |
Tank | Glass or Polypropylene |
Etch Rate @ 25¡É | 30 ¡Ê/sec |
Etch Rate @ 40¡É | 80 ¡Ê/sec |
Etch Rate @ 50¡É | 100 ¡Ê/sec |
Etch Rate @ 65¡É | 240 ¡Ê/sec |
APPLICATION :
• Aluminum metallizations up to 25,000 ¡Ê/sec are vacumm deposited on the silicon slice, coated with a photoresist, and UV exposed using an appropriate photographic mask.
• The resist is developed to protect the aluminum where interconnections are desired. Then the unprotected areas of the aluminum are removed by etching with TRANSENE Aluminum Etchant, followed by a water rinse.
• Etching time is ependent upon the etchant temperature and the aluminum film thickness.
When etching thick aluminum films, a higher etch rate is required; thus a higher etchant temperature should be used.
• Likewise, for thinner aluminum films, slower etch rates are desired and a lower etchant temperature should be shosen. At a specific etchant temperature, the etching time is given by the following formula