Gold Etchant TFA
Gold Etchant TFA는 Microelectronic Circuits에서 Photo Fabrication 공정을 통하여 Gold를 선택적으로 에칭하기 위하여 사용됩니다. Photoresist Technology를 이용하여 Alumina 또는 다른 Substrates위에 형성된 Electrodes, Resistor Pattern, Gold Bump등의 형성에 사용됩니다. 고순도의 제품으로 Sodium 함량이 적으며, 0.2 micron filtration을 통해 반도체, Microelectronics Applications에 적합합니다.
특히 국내 Gold Bump관련 업체에 이미 납품되어 사용되고 있으며, 일정한 Etch rate으로 일일 1500매(±100매)의 공정 능력을 보이고 있습니다. 또한 원액에 DI Water를 1:1로 희석하여 사용할 수 있기 때문에 더욱 경제적이며, 원가 절감에 탁월한 장점을 가지고 있습니다.
COMPATIBILITY :
| | Al | Au | Cr | Cu | Ni | Si | Si3N4 | SiO2 | Ti | W | GaAs | Ta/TaN |
| GE-TFA | Etch | Etch | Ok | Corrode | Slight | Ok | Ok | Ok | Ok | Ok | Etch | Ok |
Etch = significant attack / Slight = Slight attack / Ok = No Attack / Surf ox = Surface Oxidation /
Corrode = Surface Corrosion
Selectivity of about 10:1 for "slight" and selectivity > 1000:1 for "ok" or "no attack"
PROPERTIES :
| | Gold Etchant GE-TFA
|  |
| Ventilation | Hood Recommended |
| Operating Temperature | Room Temperature |
| Agitation | Work agitation speed
Accelerates etch rate |
| Tank | Glass |
| Etch Rate @ 25℃ | 28 Å/sec |
| Composition | Ready to use liquid
Contains KI-I2 complex |
| pH @ 20℃ | |
| Ednsity @20℃ | |
| Etch Capacity gm/gal | 100 |
| Rinse | Distilled, Dionized Water |
Waste Disposal
(Reclaim Gold in spent etchant) | Dispose in accordance with all federal, state and local regulations. |
APPLICATION :
• Etching readily controlled with minimum undercutting - provides excellent definition.
• Room temperature operated.
• Uniform etch rates.
• Economical
• Gold Etchant GE TFA is Cyanide free for standard applications.
ETCH-RATE :
IMPURITY :
Max. Impurity
| (ppm) |
| Sodium (Na) | 40 |
| Chlorine & Bromides (Cl) | 100 |
| Lead (Pb) | 5 |
| Iron (Fe) | 3 |
| Sulfur (as sulfates) | 50 |
| Phosphorous (as phosphates) | 10 |
